Up to now the RF of a certain power was coupled into the pins of an IC to characterize its disturbance immunity. The IC's malfunction then indicated any internal interference.

The RF disturbance from the power amplifier flows through the connected probe to the pin under examination. An RF current and voltage measurement is carried out in the probe tip at the same time. The parameters recorded allow more precise conclusions to be drawn with regard to an IC's EMC.

Functional faults that occur at large current values have magnetic causes; capacitive coupling will be the cause at large voltage values. The reactive currents measured with the new measuring procedures are not detected by a common power measurement. Thus, detailed physical findings remained in the dark. IC development benefits from this new measuring method of RF injection.
 

 

Technical data

RF injection probes:	Probe 501	Probe 502	Probe 503
Ammeter:	2 MHz - 3 GHz	2 MHz - 3 GHz	200 kHz - 1.5 GHz
Max. current:	1 A	1 A	1 A
Voltmeter:	16 kHz - 3 GHz	16 kHz - 3 GHz	16 kHz - 3 GHz
Max. voltage:	50 Veff	1 Veff	50 Veff
Transfer factor:	- 40 dB	0 dB	- 40 dB
Coupling capacitance:	3 µF oder 6.8 nF*	3 µF oder 6.8 nF*	3 µF oder 6.8 nF*
Max. power transmission:	30 W	30 W	30 W
Auxiliary power:	12 V	12 V	12 V

詳細規格：
                   P500
                   P501/P502/P503