Application:
The probes generates an RF field (magnetic/electric) and is used to evaluate the immunity of ICs, in particular multi-pole chip sets, to direct injection of RF field. The probe is positioned via spacer ring at a defined distance (3 or 10 mm) above the IC.
Properties:
generated RF field (magnetic/electric)
high field strength
Technical parameters:
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RF-Probes:
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P1401
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P1501
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Frequeny range max.:
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3 GHz
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Forward power max:
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100 W
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Line impedance RF:
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50 Ohm
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Termination RF:
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short
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Connection RF:
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50 Ohm N connector
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Measurement output:
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50 Ohm, SMB
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Shunt for current/voltage measurement:
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0.1 Ohm
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Current/voltage correction factor R:
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-46 dB Ohm
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-60 dB Ohm
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RF field injection probes P1401(H field) and P1501(E field) based on IEC 62132-2
詳細規格：
P1401 / P1501
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