Application:
The field sources are used to generate an ESD field (magnetic/electric) and measure the ICs immunity to ESD fields, in particular multi-pole ICs (chip sets).
The probes are positioned at a defined distance (3 or 10 mm) above the IC.
Properties:
A pulse current is fed into a current loop within the probe to generate the ESD field (magnetic/electric). This produces a field pulse that leaves the probe via its bottom. The slope rate of 200 ps has a similar effect in the IC as ESD transients.
Technical parameters:
ESD-Probes
|
P1202-2
|
P1202
|
P1301
|
Pulse current/voltage:
|
± 150 A
|
± 150 A
|
± 0.1 - 9.5 kV
|
Pulse shape:
|
0.7 / 60 ns
|
0.2 / 2.5 ns
|
0.2 / 5.5 ns
|
Pulse frequency:
|
|
0.1 - 10 Hz
|
|
High voltage:
|
|
± 0.1 - 9.5 kV
|
|
Measurement output:
|
|
50 Ohm, SMB
|
|
Control unit:
|
|
BPS 203
|
|
|
|
|
|
Shunt for current
measurement:
|
0.1 Ohm
|
0.1 Ohm
|
|
Current correction
factor R:
|
-26 dB Ohm
|
-26 dB Ohm
|
ESD H-field injection with probe P1202-2 (IEC 61000-4-2):
ESD H-field injection with probe P1202:
ESD E-field injection with probe P1301:
詳細規格:
P1202-2/1202/1301 |